... ... ...
...
ACDCshop logo
Set of tools for repairing soldered connections
GreekSeperatorEnglishSeperator
Νέα προϊόντα Πλοηγός Εταιρία Λογαριασμός Καλάθι Επικοινωνία
Αναζήτηση:    
  Κατάλογος » Hμιαγωγοί » Transistor / Fet » FET : Transistor N-MOSFET 30V 14A 2,5W SO8  [Είσοδος
Background
...
  arrow Kατηγοριες  
     
  arrow Δημοφιλή  
Transistor N-FET - Transistor  N-JFET, unipolar, 35V, 2mA, 0.625W, TO92, Igt  50mA
Transistor N-FET - Transistor N-JFET, unipolar, 35V, 2mA, 0.625W, TO92, Igt 50mA
Τελική: 2.26 €
     
  arrow Νεο Περισσότερα  
Transistor N-FET - Transistor  N-MOSFET, unipolar, 500V, 8A, Idm  52A, 48W, TO220FP
Transistor N-FET - Transistor N-MOSFET, unipolar, 500V, 8A, Idm 52A, 48W, TO220FP
Τελική: 4.32 €
     
  arrow Πληρωμες  
Visa Mastercard 
Verified visa Secure Code 
Paypal 
     
  arrow Πληροφορίες  
  Η εταιρία
  Τρόποι πληρωμής
  Τρόποι αποστολής
  Τρόποι αγοράς
  Συχνές ερωτήσεις
  Δήλωση απορρήτου
  Όροι Χρήσης
  Επικοινωνία
     
Seperator
Seperator

FET - Transistor N-MOSFET 30V 14A 2,5W SO8

Κωδικός: 2989

IRF8714PBF PDF

IRF8714PBF

Τιμή χωρίς ΦΠΑ:  0.52 €
Αξία ΦΠΑ:  0.13 €
Τελική με ΦΠΑ:  0.65 €
Ποσότητα:   
* Αποστολή σε 1 εργάσιμη ημέρα.
Specifications
Manufacturer INTERNATIONAL RECTIFIER
Transistor type N-MOSFET
Polarisation unipolar
Transistor kind HEXFET
Drain-source voltage 30V
Drain current 14A
Power 2.5W
Case SO8
Gate-source voltage 20V
On-state resistance 8.7mΩ
Junction-to-ambient thermal resistance 50K/W
Mounting SMD
Gate charge 8.1nC
 
Διαθεσιμότητα: Αμεσα
Seperator Πίσω Κριτικές Seperator
Κατασκευαστές--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
left left Δείτε ακόμα right
TSM2302CX - Transistor N-MOS 20V 2,4A 1,25W 0,095R SOT23
TSM2302CX - Transistor N-MOS 20V 2,4A 1,25W 0,095R SOT23

IRFP4332PBF - Transistor N-MOSFET 250V 57A 360W TO247AC
IRFP4332PBF - Transistor N-MOSFET 250V 57A 360W TO247AC

BC546A-DIO - Transistor NPN, bipolar, 65V, 100mA, 500mW, TO92
BC546A-DIO - Transistor NPN, bipolar, 65V, 100mA, 500mW, TO92

VP0550N3-G - Transistor P-MOSFET, -500V, -100mA, 1W, TO92, Channel enhanced
VP0550N3-G - Transistor P-MOSFET, -500V, -100mA, 1W, TO92, Channel enhanced

IPD350N06LGBTMA1 - Transistor  N-MOSFET, unipolar, 60V, 50A, 71W, DPAK, PG-TO252-3
IPD350N06LGBTMA1 - Transistor N-MOSFET, unipolar, 60V, 50A, 71W, DPAK, PG-TO252-3

IRFR5305TRPBF - Transistor  P-MOSFET, unipolar, HEXFET, -55V, -28A, 89W, DPAK
IRFR5305TRPBF - Transistor P-MOSFET, unipolar, HEXFET, -55V, -28A, 89W, DPAK

BCR191E6327 - Transistor  PNP, bipolar, 50V, 100mA, 200mW, SOT23
BCR191E6327 - Transistor PNP, bipolar, 50V, 100mA, 200mW, SOT23

MJD32CG - Transistor  PNP, bipolar, 100V, 3A, 15W, DPAK
MJD32CG - Transistor PNP, bipolar, 100V, 3A, 15W, DPAK

PBSS5240T.215 - Transistor  PNP, bipolar, 40V, 2A, 380mW, SOT23
PBSS5240T.215 - Transistor PNP, bipolar, 40V, 2A, 380mW, SOT23

BCV26 - Transistor  PNP, bipolar, Darlington, 40V, 500mA, 250mW, SOT23
BCV26 - Transistor PNP, bipolar, Darlington, 40V, 500mA, 250mW, SOT23

2N7008-G - Transistor  N-MOSFET, 60V, 500mA, TO92
2N7008-G - Transistor N-MOSFET, 60V, 500mA, TO92

IXTK82N25P - Transistor  N-MOSFET, unipolar, 250V, 82A, 500W, TO264
IXTK82N25P - Transistor N-MOSFET, unipolar, 250V, 82A, 500W, TO264

STP8NK100Z - Transistor  N-MOSFET, unipolar, 1kV, 4.3A, 160W, TO220-3
STP8NK100Z - Transistor N-MOSFET, unipolar, 1kV, 4.3A, 160W, TO220-3

MJE340-CDI - Transistor  NPN, bipolar, 300V, 0.5A, 20W, TO126
MJE340-CDI - Transistor NPN, bipolar, 300V, 0.5A, 20W, TO126

WMK100N07TS-CYG - Transistor  N-MOSFET, unipolar, 70V, 100A, Idm  400A, 133W, TO220-3
WMK100N07TS-CYG - Transistor N-MOSFET, unipolar, 70V, 100A, Idm 400A, 133W, TO220-3

Seperator
Εκτέλεση: 0.008 s
Background
Rounded corner: bottom-left Background Rounded corner: bottom-right