|
Specifications |
| Manufacturer |
INTERNATIONAL RECTIFIER |
| Transistor type |
N-MOSFET |
| Polarisation |
unipolar |
| Transistor kind |
HEXFET |
| Drain-source voltage |
55V |
| Drain current |
110A |
| Power |
200W |
| Case |
TO262 |
| Gate-source voltage |
20V |
| On-state resistance |
8mΩ |
| Junction-to-case thermal resistance |
750mK/W |
| Mounting |
THT |
| Gate charge |
97.3nC |
| |
|
Αισθητήρια
Hμιαγωγοί
DC-DC Converters
Καθαριστικά - Χημικά
