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Specifications |
| Manufacturer |
TOSHIBA |
| Type of transistor |
IGBT |
| Collector-emitter voltage |
600V |
| Collector current |
30A |
| Power dissipation |
170W |
| Case |
TO3PN |
| Gate-emitter voltage |
±20V |
| Pulsed collector current |
60A |
| Mounting |
THT |
| Kind of package |
tube |
| Turn-on time |
240ns |
| Turn-off time |
430ns |
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