... ... ...
...
ACDCshop logo
Set of tools for repairing soldered connections
GreekSeperatorEnglishSeperator
Νέα προϊόντα Πλοηγός Εταιρία Λογαριασμός Καλάθι Επικοινωνία
Αναζήτηση:    
  Κατάλογος » Hμιαγωγοί » Transistor / Fet » FET : Transistor P-MOSFET, unipolar, -100V, -1.2A, 0.33W, SOT23  [Είσοδος
Background
...
  arrow Kατηγοριες  
     
  arrow Δημοφιλή  
Transistor N-FET - Transistor  N-MOSFET, unipolar, 600V, 26A, 300W, TO247
Transistor N-FET - Transistor N-MOSFET, unipolar, 600V, 26A, 300W, TO247
Τελική: 8.90 €
     
  arrow Νεο Περισσότερα  
Transistor N-MOSFET - Transistor  N-JFET, unipolar, 2mA, 0.625W, TO92, Igt  50mA
Transistor N-MOSFET - Transistor N-JFET, unipolar, 2mA, 0.625W, TO92, Igt 50mA
Τελική: 0.27 €
     
  arrow Πληρωμες  
Visa Mastercard 
Verified visa Secure Code 
Paypal 
     
  arrow Πληροφορίες  
  Η εταιρία
  Τρόποι πληρωμής
  Τρόποι αποστολής
  Τρόποι αγοράς
  Συχνές ερωτήσεις
  Δήλωση απορρήτου
  Όροι Χρήσης
  Επικοινωνία
     
Seperator
Seperator

Transistor P-FET - Transistor P-MOSFET, unipolar, -100V, -1.2A, 0.33W, SOT23

Κωδικός: 41206

ZVP3310F.pdf PDF 

ZVP3310FTA

Τιμή χωρίς ΦΠΑ:  0.48 €
Αξία ΦΠΑ:  0.12 €
Τελική με ΦΠΑ:  0.60 €
Ποσότητα:   
* Αποστολή σε 2-3 εργάσιμες ημέρες.
Specifications
Manufacturer DIODES INCORPORATED
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -100V
Drain current -1.2A
Power dissipation 0.33W
Case SOT23
Gate-source voltage ±20V
On-state resistance 20Ω
Mounting SMD
Kind of package reel, tape
Kind of channel enhanced
 
Διαθεσιμότητα: Με παραγγελία
Seperator Πίσω Κριτικές Seperator
Κατασκευαστές--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
left left Δείτε ακόμα right
IRF7413PBF - Transistor N-MOSFET 30V 13A 2,5W 0,011R SO8
IRF7413PBF - Transistor N-MOSFET 30V 13A 2,5W 0,011R SO8

IRFP2907PBF - Transistor N-MOSFET 75V 209A 470W TO247AC
IRFP2907PBF - Transistor N-MOSFET 75V 209A 470W TO247AC

VP3203N3-G - Transistor P-MOSFET, -30V, -4A, 740mW, TO92, Channel enhanced
VP3203N3-G - Transistor P-MOSFET, -30V, -4A, 740mW, TO92, Channel enhanced

BD679AG - Transistor  NPN, bipolar, Darlington, 80V, 4A, 40W, TO225AA
BD679AG - Transistor NPN, bipolar, Darlington, 80V, 4A, 40W, TO225AA

IRFIBC30GPBF - Transistor  N-MOSFET, unipolar, 600V, 2.5A, 35W, TO220ISO
IRFIBC30GPBF - Transistor N-MOSFET, unipolar, 600V, 2.5A, 35W, TO220ISO

IRFP4868PBF - Transistor  N-MOSFET, unipolar, HEXFET, 300V, 70A, 517W, TO247AC
IRFP4868PBF - Transistor N-MOSFET, unipolar, HEXFET, 300V, 70A, 517W, TO247AC

IRF9530NSTRLPBF - Transistor  P-MOSFET, unipolar, -100V, -14A, 3.8W, D2PAK
IRF9530NSTRLPBF - Transistor P-MOSFET, unipolar, -100V, -14A, 3.8W, D2PAK

IRLR9343TRPBF - Transistor  P-MOSFET, unipolar, HEXFET, logic level, -55V, -20A
IRLR9343TRPBF - Transistor P-MOSFET, unipolar, HEXFET, logic level, -55V, -20A

2N2907A-DIO - Transistor  PNP, 60V, 600mA, 625mW, TO3
2N2907A-DIO - Transistor PNP, 60V, 600mA, 625mW, TO3

BCM857BS - Transistor  PNP, bipolar, 45V, 100mA, 300mW, SOT363
BCM857BS - Transistor PNP, bipolar, 45V, 100mA, 300mW, SOT363

MMBT4403LT1G - Transistor  PNP, bipolar, 40V, 600mA, SOT23
MMBT4403LT1G - Transistor PNP, bipolar, 40V, 600mA, SOT23

BC847BLT3G - Transistor  NPN, bipolar, 50V, 100mA, SOT23
BC847BLT3G - Transistor NPN, bipolar, 50V, 100mA, SOT23

BC850CWH6327 - Transistor  NPN, bipolar, 45V, 100mA, 330mW, SOT323
BC850CWH6327 - Transistor NPN, bipolar, 45V, 100mA, 330mW, SOT323

IXFN340N07 - Module, single transistor, 70V, 340A, SOT227B, Ugs  ±30V, screw
IXFN340N07 - Module, single transistor, 70V, 340A, SOT227B, Ugs ±30V, screw

STN4NF20L - Transistor  N-MOSFET, STripFET™ II, unipolar, 200V, 1A, 3.3W
STN4NF20L - Transistor N-MOSFET, STripFET™ II, unipolar, 200V, 1A, 3.3W

Seperator
Εκτέλεση: 0.047 s
Background
Rounded corner: bottom-left Background Rounded corner: bottom-right