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  Κατάλογος » Hμιαγωγοί » Transistor / Fet » FET : Transistor P-MOSFET, TrenchFET®, unipolar, -40V, -50A, Idm -100A  [Είσοδος
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Transistor P-FET - Transistor  P-MOSFET, unipolar, -60V, -2.6A, 2.3W, SOT223
Transistor P-FET - Transistor P-MOSFET, unipolar, -60V, -2.6A, 2.3W, SOT223
Τελική: 1.62 €
     
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Transistor N-FET - Transistor  N-MOSFET, unipolar, 85V, 148A, Idm  850A, 300W, TO220AB
Transistor N-FET - Transistor N-MOSFET, unipolar, 85V, 148A, Idm 850A, 300W, TO220AB
Τελική: 3.81 €
     
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Seperator
Seperator

Transistor P-FET - Transistor P-MOSFET, TrenchFET®, unipolar, -40V, -50A, Idm -100A

Κωδικός: 43471

SUD50P04-08-GE3

Τιμή χωρίς ΦΠΑ:  1.55 €
Αξία ΦΠΑ:  0.37 €
Τελική με ΦΠΑ:  1.92 €
Ποσότητα:   
* Αποστολή σε 1 εργάσιμη ημέρα.
Specifications
ManufacturerVISHAY
Type of transistorP-MOSFET
TechnologyTrenchFET®
Polarisationunipolar
Drain-source voltage-40V
Drain current-50A
Pulsed drain current-100A
Power dissipation73.5W
Gate-source voltage±20V
On-state resistance8.1mΩ
MountingSMD
Gate charge159nC
Kind of channelenhancement
CaseDPAK, TO252
Kind of packagereel, tape
Διαθεσιμότητα: Αμεσα
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Κατασκευαστές--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
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