... ... ...
...
ACDCshop logo
Set of tools for repairing soldered connections
GreekSeperatorEnglishSeperator
Νέα προϊόντα Πλοηγός Εταιρία Λογαριασμός Καλάθι Επικοινωνία
Αναζήτηση:    
  Κατάλογος » Hμιαγωγοί » Transistor / Fet » FET : Transistor N-MOSFET, X3-Class, unipolar, 300V, 38A, 240W, TO220AB  [Είσοδος
Background
...
  arrow Kατηγοριες  
     
  arrow Δημοφιλή  
Transistor N-FET - Transistor  N-JFET, unipolar, 35V, 2mA, 0.625W, TO92, Igt  50mA
Transistor N-FET - Transistor N-JFET, unipolar, 35V, 2mA, 0.625W, TO92, Igt 50mA
Τελική: 2.26 €
     
  arrow Νεο Περισσότερα  
Transistor P-FET - Transistor  P-MOSFET x2, unipolar, -60V, -2.9A, 2W, SO8
Transistor P-FET - Transistor P-MOSFET x2, unipolar, -60V, -2.9A, 2W, SO8
Τελική: 1.40 €
     
  arrow Πληρωμες  
Visa Mastercard 
Verified visa Secure Code 
Paypal 
     
  arrow Πληροφορίες  
  Η εταιρία
  Τρόποι πληρωμής
  Τρόποι αποστολής
  Τρόποι αγοράς
  Συχνές ερωτήσεις
  Δήλωση απορρήτου
  Όροι Χρήσης
  Επικοινωνία
     
Seperator
Seperator

Transistor N-MOSFET - Transistor N-MOSFET, X3-Class, unipolar, 300V, 38A, 240W, TO220AB

Κωδικός: 37344

IXFP38N30X3 PDF

IXFP38N30X3

Τιμή χωρίς ΦΠΑ:  5.04 €
Αξία ΦΠΑ:  1.21 €
Τελική με ΦΠΑ:  6.25 €
Ποσότητα:   
* Αποστολή σε 2-3 εργάσιμες ημέρες.
Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™,   X3-Class
Polarisation unipolar
Drain-source voltage 300V
Drain current 38A
Power dissipation 240W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 50mΩ
Mounting THT
Gate charge 35nC
Kind of package tube
Kind of channel enhanced
Reverse recovery time 90ns
Gross weight 2.1 g
 
Διαθεσιμότητα: Με παραγγελία
Seperator Πίσω Κριτικές Seperator
Κατασκευαστές--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
left left Δείτε ακόμα right
BDW94C - Transistor PNP Darlington 100V 12A 80W TO220
BDW94C - Transistor PNP Darlington 100V 12A 80W TO220

IRFP260NPBF - Transistor N-MOSFET 200V 50A 300W TO247AC
IRFP260NPBF - Transistor N-MOSFET 200V 50A 300W TO247AC

IRFB4115PBF - Transistor N-MOSFET 150V 104A 380W TO220AB
IRFB4115PBF - Transistor N-MOSFET 150V 104A 380W TO220AB

SUP57N20-33 - Transistor N-MOSFET 200V 57A 300W TO220AB
SUP57N20-33 - Transistor N-MOSFET 200V 57A 300W TO220AB

IRFP9140PBF - Transistor P-MOSFET, unipolar, -100V, -21A, 180W, TO247AC
IRFP9140PBF - Transistor P-MOSFET, unipolar, -100V, -21A, 180W, TO247AC

IRLI3705NPBF - Transistor  N-MOSFET, unipolar, HEXFET, logic level, 55V, 47A, 47W
IRLI3705NPBF - Transistor N-MOSFET, unipolar, HEXFET, logic level, 55V, 47A, 47W

BC859AW-DIO - Transistor  PNP, bipolar, 30V, 100mA, 200mW, SOT323
BC859AW-DIO - Transistor PNP, bipolar, 30V, 100mA, 200mW, SOT323

BCW66KFE6327 - Transistor  NPN, bipolar, 45V, 800mA, 500mW, SOT23
BCW66KFE6327 - Transistor NPN, bipolar, 45V, 800mA, 500mW, SOT23

MJH11017G - Transistor  PNP, bipolar, Darlington, 150V, 15A, 150W, TO247
MJH11017G - Transistor PNP, bipolar, Darlington, 150V, 15A, 150W, TO247

KSH122TM - Transistor  NPN, bipolar, Darlington, 100V, 8A, 1.75W, TO252/DPAK
KSH122TM - Transistor NPN, bipolar, Darlington, 100V, 8A, 1.75W, TO252/DPAK

MJ11032G - Transistor  NPN, bipolar, Darlington, 120V, 30A, 300W, TO3
MJ11032G - Transistor NPN, bipolar, Darlington, 120V, 30A, 300W, TO3

BSS126H6327XTSA2 - Transistor  N-MOSFET, unipolar, 600V, 21mA, 500mW, SOT23, SIPMOS™
BSS126H6327XTSA2 - Transistor N-MOSFET, unipolar, 600V, 21mA, 500mW, SOT23, SIPMOS™

IXTQ62N15P - Transistor  N-MOSFET, unipolar, 150V, 62A, 350W, TO3P
IXTQ62N15P - Transistor N-MOSFET, unipolar, 150V, 62A, 350W, TO3P

STW12N120K5 - Transistor  N-MOSFET, unipolar, 1.2kV, 7.6A, 250W, TO247
STW12N120K5 - Transistor N-MOSFET, unipolar, 1.2kV, 7.6A, 250W, TO247

STW24NM60N - Transistor  N-MOSFET, unipolar, 600V, 11A, 125W, TO247
STW24NM60N - Transistor N-MOSFET, unipolar, 600V, 11A, 125W, TO247

Seperator
Εκτέλεση: 0.014 s
Background
Rounded corner: bottom-left Background Rounded corner: bottom-right