Specifications |
Manufacturer |
VISHAY |
Type of transistor |
N-MOSFET x2 |
Polarisation |
unipolar |
Drain-source voltage |
60V |
Drain current |
3.4A |
Power dissipation |
3.1W |
Case |
SO8 |
Gate-source voltage |
±20V |
On-state resistance |
72mΩ |
Mounting |
SMD |
Gate charge |
20nC |
Kind of channel |
enhanced |
Gross weight |
0.106 g |
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