|
Specifications |
| Manufacturer |
INFINEON TECHNOLOGIES |
| Type of transistor |
N-MOSFET x2 |
| Technology |
HEXFET® |
| Polarisation |
unipolar |
| Drain-source voltage |
50V |
| Drain current |
3A |
| Power dissipation |
2W |
| Case |
SO8 |
| Mounting |
SMD |
| Kind of package |
reel |
| Kind of channel |
enhanced |
| Gross weight |
0.118 g |
| |
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