|
Specifications |
| Manufacturer |
Infineon (IRF) |
| Transistor type |
N-MOSFET |
| Polarisation |
unipolar |
| Transistor kind |
HEXFET |
| Drain-source voltage |
40V |
| Drain current |
317A |
| Power |
294W |
| Case |
TO220AB |
| Gate-source voltage |
20V |
| On-state resistance |
1.6mΩ |
| Junction-to-case thermal resistance |
510mK/W |
| Mounting |
THT |
| Gate charge |
216nC |
| |
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