|
Specifications |
| Manufacturer |
STMicroelectronics |
| Type of transistor |
N-MOSFET |
| Technology |
SuperMesh™ |
| Polarisation |
unipolar |
| Drain-source voltage |
900V |
| Drain current |
5.8A |
| Pulsed drain current |
36.8A |
| Power dissipation |
200W |
| Case |
TO247 |
| Gate-source voltage |
±30V |
| On-state resistance |
980mΩ |
| Mounting |
THT |
| Kind of package |
tube |
| Kind of channel |
enhanced |
| Features of semiconductor devices |
ESD protected gate |
| Gross weight |
4.51 g |
| |
|
Αισθητήρια
Hμιαγωγοί
DC-DC Converters
Καθαριστικά - Χημικά
