| Specifications |
| Manufacturer | TOSHIBA |
| Type of transistor | N-MOSFET |
| Polarisation | unipolar |
| Drain-source voltage | 500V |
| Drain current | 15A |
| Power dissipation | 210W |
| Case | TO3PN |
| Gate-source voltage | ±30V |
| On-state resistance | 0.4Ω |
| Mounting | THT |
| Gate charge | 38nC |
| Kind of package | tube |
| Kind of channel | enhancement |
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