| Specifications |
| Manufacturer | TEXAS INSTRUMENTS |
| Type of transistor | N-MOSFET |
| Technology | NexFET™ |
| Polarisation | unipolar |
| Drain-source voltage | 40V |
| Drain current | 100A |
| Power dissipation | 259W |
| Case | TO220-3 |
| Gate-source voltage | ±20V |
| On-state resistance | 2.4mΩ |
| Mounting | THT |
| Gate charge | 52nC |
| Kind of package | tube |
| Kind of channel | enhancement |
| Heatsink thickness | 1.14...1.4mm |
|
Αισθητήρια
Hμιαγωγοί
DC-DC Converters
Καθαριστικά - Χημικά
