| Specifications |
| Manufacturer | INFINEON TECHNOLOGIES |
| Type of transistor | N-MOSFET |
| Technology | HEXFET® |
| Polarisation | unipolar |
| Drain-source voltage | 200V |
| Drain current | 25A |
| Power dissipation | 144W |
| Case | TO220AB |
| Gate-source voltage | ±20V |
| On-state resistance | 72.5mΩ |
| Mounting | THT |
| Gate charge | 25nC |
| Kind of package | tube |
| Kind of channel | enhancement |
|
Αισθητήρια
Hμιαγωγοί
DC-DC Converters
Καθαριστικά - Χημικά
