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Specifications |
| Manufacturer |
IXYS |
| Type of transistor |
N-MOSFET |
| Polarisation |
unipolar |
| Drain-source voltage |
100V |
| Drain current |
200A |
| Power dissipation |
550W |
| Case |
TO247-3 |
| On-state resistance |
5.5mΩ |
| Mounting |
THT |
| Gate charge |
152nC |
| Kind of package |
tube |
| Kind of channel |
enhanced |
| Features of semiconductor devices |
thrench gate power mosfet |
| Reverse recovery time |
76ns |
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