|
Specifications |
| Manufacturer |
TOSHIBA |
| Type of transistor |
N-MOSFET |
| Polarisation |
unipolar |
| Drain-source voltage |
100V |
| Drain current |
100A |
| Power dissipation |
255W |
| Case |
TO220AB |
| Gate-source voltage |
±20V |
| On-state resistance |
2.8mΩ |
| Mounting |
THT |
| Gate charge |
0.14µC |
| Kind of package |
tube |
| Kind of channel |
enhancement |
| |
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