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  Κατάλογος » Hμιαγωγοί » Transistor / Fet » FET : Transistor N-MOSFET, Trench™, unipolar, 100V, 160A, 430W, TO220AB  [Είσοδος
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Transistor N-FET - Transistor  N-JFET, unipolar, 35V, 2mA, 0.625W, TO92, Igt  50mA
Transistor N-FET - Transistor N-JFET, unipolar, 35V, 2mA, 0.625W, TO92, Igt 50mA
Τελική: 2.26 €
     
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Transistor N-FET - Transistor  N-MOSFET, unipolar, 500V, 8A, Idm  52A, 48W, TO220FP
Transistor N-FET - Transistor N-MOSFET, unipolar, 500V, 8A, Idm 52A, 48W, TO220FP
Τελική: 4.32 €
     
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Transistor N-FET - Transistor N-MOSFET, Trench™, unipolar, 100V, 160A, 430W, TO220AB

Κωδικός: 37497

IXTP160N10T PDF

IXTP160N10T

Τιμή χωρίς ΦΠΑ:  4.39 €
Αξία ΦΠΑ:  1.05 €
Τελική με ΦΠΑ:  5.44 €
Ποσότητα:   
* Αποστολή σε 1 εργάσιμη ημέρα.
Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology Trench™
Polarisation unipolar
Drain-source voltage 100V
Drain current 160A
Power dissipation 430W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 7mΩ
Mounting THT
Gate charge 132nC
Kind of package tube
Kind of channel enhanced
Reverse recovery time 60ns
Gross weight 2.033 g
 
Διαθεσιμότητα: Αμεσα
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Κατασκευαστές--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
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