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  Κατάλογος » Hμιαγωγοί » Transistor / Fet » FET : Transistor N-MOSFET 40V 206A 300W TO273AA  [Είσοδος
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Transistor N-FET - Transistor  N-JFET, unipolar, 35V, 2mA, 0.625W, TO92, Igt  50mA
Transistor N-FET - Transistor N-JFET, unipolar, 35V, 2mA, 0.625W, TO92, Igt 50mA
Τελική: 2.26 €
     
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Transistor P-FET - Transistor  P-MOSFET x2, unipolar, -60V, -2.9A, 2W, SO8
Transistor P-FET - Transistor P-MOSFET x2, unipolar, -60V, -2.9A, 2W, SO8
Τελική: 1.40 €
     
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FET - Transistor N-MOSFET 40V 206A 300W TO273AA

Κωδικός: 3355

IRFBA1404PPBF PDF

IRFBA1404PPBF

Τιμή χωρίς ΦΠΑ:  2.66 €
Αξία ΦΠΑ:  0.64 €
Τελική με ΦΠΑ:  3.30 €
Ποσότητα:   
Προειδοποίηση Μεγάλος χρόνος παράδοσης
Specifications
Manufacturer INTERNATIONAL RECTIFIER
Transistor type N-MOSFET
Polarisation unipolar
Transistor kind HEXFET
Drain-source voltage 40V
Drain current 206A
Power 300W
Case SUPER220
Gate-source voltage 20V
On-state resistance 3.7mΩ
Junction-to-case thermal resistance 500mK/W
Mounting THT
Gate charge 160nC
 
Διαθεσιμότητα: Με παραγγελία
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Κατασκευαστές--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
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