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Specifications |
| Manufacturer |
STMicroelectronics |
| Type of transistor |
IGBT |
| Collector-emitter voltage |
650V |
| Collector current |
60A |
| Power dissipation |
375W |
| Case |
TO3P |
| Gate-emitter voltage |
±20V |
| Pulsed collector current |
240A |
| Mounting |
THT |
| Gate charge |
306nC |
| Kind of package |
tube |
| Features of semiconductor devices |
integrated anti-parallel diode |
| Gross weight |
5.21 g |
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