| Specifications |
| Manufacturer | STMicroelectronics |
| Type of transistor | IGBT |
| Collector-emitter voltage | 650V |
| Collector current | 40A |
| Power dissipation | 283W |
| Case | TO247-3 |
| Gate-emitter voltage | ±30V |
| Pulsed collector current | 160A |
| Mounting | THT |
| Gate charge | 0.21µC |
| Kind of package | tube |
| Features of semiconductor devices | integrated anti-parallel diode |
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