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  Κατάλογος » Hμιαγωγοί » Transistor / Fet » FET : Module, single transistor, Uds 500V, Id 75A, SOT227B, 1.04kW  [Είσοδος
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Transistor N-FET - Transistor  N-JFET, unipolar, 35V, 2mA, 0.625W, TO92, Igt  50mA
Transistor N-FET - Transistor N-JFET, unipolar, 35V, 2mA, 0.625W, TO92, Igt 50mA
Τελική: 2.26 €
     
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Transistor N-FET - Transistor  N-MOSFET, unipolar, 500V, 8A, Idm  52A, 48W, TO220FP
Transistor N-FET - Transistor N-MOSFET, unipolar, 500V, 8A, Idm 52A, 48W, TO220FP
Τελική: 4.32 €
     
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Transistor N-MOSFET - Module, single transistor, Uds 500V, Id 75A, SOT227B, 1.04kW

Κωδικός: 35318

IXFN100N50P PDF

IXFN100N50P

Τιμή χωρίς ΦΠΑ:  39.75 €
Αξία ΦΠΑ:  9.54 €
Τελική με ΦΠΑ:  49.29 €
Ποσότητα:   
Προειδοποίηση Μεγάλος χρόνος παράδοσης
Specifications
Manufacturer IXYS
Type of module transistor
Semiconductor structure single transistor
Drain-source voltage 500V
Drain current 75A
Case SOT227B
Power 1.04kW
Max. forward impulse current 250A
Gate-source voltage ±30V
Mounting screw
Electrical mounting screw
Polarisation unipolar
On-state resistance 49mΩ
Operating temperature 55...150°C
Technology HiPerFET™
 
Διαθεσιμότητα: Με παραγγελία
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Κατασκευαστές--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
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