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  Κατάλογος » Hμιαγωγοί » Transistor / Fet » FET : Module, single transistor, Uds 500V, Id 75A, SOT227B, 1.04kW  [Είσοδος
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Transistor P-FET - Transistor  P-MOSFET, unipolar, -60V, -2.6A, 2.3W, SOT223
Transistor P-FET - Transistor P-MOSFET, unipolar, -60V, -2.6A, 2.3W, SOT223
Τελική: 1.62 €
     
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Transistor N-MOSFET - Transistor  N-MOSFET, unipolar, 600V, 6A, Idm  24A, 35W, TO220
Transistor N-MOSFET - Transistor N-MOSFET, unipolar, 600V, 6A, Idm 24A, 35W, TO220
Τελική: 6.20 €
     
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Transistor N-MOSFET - Module, single transistor, Uds 500V, Id 75A, SOT227B, 1.04kW

Κωδικός: 35318

IXFN100N50P PDF

IXFN100N50P

Τιμή χωρίς ΦΠΑ:  39.75 €
Αξία ΦΠΑ:  9.54 €
Τελική με ΦΠΑ:  49.29 €
Ποσότητα:   
* Αποστολή σε 2-3 εργάσιμες ημέρες.
Specifications
Manufacturer IXYS
Type of module transistor
Semiconductor structure single transistor
Drain-source voltage 500V
Drain current 75A
Case SOT227B
Power 1.04kW
Max. forward impulse current 250A
Gate-source voltage ±30V
Mounting screw
Electrical mounting screw
Polarisation unipolar
On-state resistance 49mΩ
Operating temperature 55...150°C
Technology HiPerFET™
 
Διαθεσιμότητα: Με παραγγελία
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Κατασκευαστές--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
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