|
Specifications |
| Manufacturer |
IXYS |
| Type of module |
transistor |
| Semiconductor structure |
single transistor |
| Drain-source voltage |
500V |
| Drain current |
75A |
| Case |
SOT227B |
| Power |
1.04kW |
| Max. forward impulse current |
250A |
| Gate-source voltage |
±30V |
| Mounting |
screw |
| Electrical mounting |
screw |
| Polarisation |
unipolar |
| On-state resistance |
49mΩ |
| Operating temperature |
55...150°C |
| Technology |
HiPerFET™ |
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