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Specifications |
| Manufacturer |
INFINEON TECHNOLOGIES |
| Type of module |
IGBT |
| Semiconductor structure |
transistor/transistor |
| Topology |
IGBT half-bridge, NTC thermistor |
| Off state voltage max. |
1.2kV |
| Collector current |
900A |
| Power |
5.1kW |
| Max. forward impulse current |
1.8kA |
| Case |
AG-PRIME2-1 |
| Electrical mounting |
screw |
| Mounting |
screw |
| Operating temperature |
40...150°C |
| Gate - emitter voltage |
±20V |
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