Specifications |
Manufacturer |
INFINEON TECHNOLOGIES |
Type of module |
IGBT |
Semiconductor structure |
diode/transistor |
Topology |
IGBT 3-phase bridge, 3-phase diode bridge, NTC thermistor |
Off state voltage max. |
1.2kV |
Collector current |
15A |
Power |
130W |
Max. forward impulse current |
30A |
Case |
AG-EASY1B-1 |
Electrical mounting |
soldered |
Mounting |
screw |
Operating temperature |
40...125°C |
Gate - emitter voltage |
±20V |
|
|