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  Catalog » Semiconductors » IGBT : H-bridge, Urmax 600V, Ic 29A, P 130W, Ifsm 60A, ECO-PAC 2, screw  [Log In] 
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Transistor IGBT, 650V, 80A, 197W, TO247-4
Transistor IGBT, 650V, 80A, 197W, TO247-4
Final price: 11.47 €
     
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Igbt - Transistor IGBT, 600V, 20A, 166W, TO247-3
Igbt - Transistor IGBT, 600V, 20A, 166W, TO247-3
Final price: 4.24 €
     
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Igbt - H-bridge, Urmax 600V, Ic 29A, P 130W, Ifsm 60A, ECO-PAC 2, screw

Prod code: 33056
PSHI50D/06 PDF

PSHI50D/06
Price:  31.43 €
VAT:  7.54 €
Final price with tax:  38.97 €
Amount:   
Warning Long delivery time
Specifications
Manufacturer POWERSEM
Type of module IGBT
Semiconductor structure diode/transistor
Topology H-bridge
Off state voltage max. 600V
Collector current 29A
Power 130W
Max. forward impulse current 60A
Case ECO-PAC 2
Application H-bridge
Electrical mounting soldered
Mounting screw
Operating temperature 40...150°C
Gate - emitter voltage ±20V
 
Availability: With order
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Manufacturers: --- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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