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IGBT
: IGBT half-bridge, Urmax 1.2kV, Ic 200A, P 1.05kW, Ifsm 400A
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Best viewed
Transistor IGBT, 650V, 100A, 268W, TO247-4
Final price:
8.53 €
What's New?
Igbt - Transistor IGBT, 650V, 60A, 250W, TO247, Eoff 1.3mJ, Eon 2.6mJ
Final price:
6.20 €
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Igbt - IGBT half-bridge, Urmax 1.2kV, Ic 200A, P 1.05kW, Ifsm 400A
Prod code:
33025
PDF
FF200R12KE3
Click to enlarge
Price:
126.51 €
VAT:
30.36 €
Final price with tax:
156.87 €
Amount:
Usually shipped within 2-3 business days.
Usually shipped within 2-3 business days.
Specifications
Manufacturer
INFINEON TECHNOLOGIES
Type of module
IGBT
Semiconductor structure
transistor/transistor
Topology
IGBT half-bridge
Off state voltage max.
1.2kV
Collector current
200A
Power
1.05kW
Max. forward impulse current
400A
Case
AG-62MM-1
Electrical mounting
screw
Mounting
screw
Operating temperature
40...125°C
Gate - emitter voltage
±20V
Availability:
With order
Manufacturers
:
---
|
FAIRCHILD SEMICONDUCTOR
|
INFINEON TECHNOLOGIES
|
INTERNATIONAL RECTIFIER
|
IXYS
|
ON SEMICONDUCTOR
|
SEMIKRON
|
ST MICROELECTRONICS
|
TOSHIBA
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