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  Catalog » Semiconductors » IGBT : H-bridge, Urmax 1.2kV, Ic 21A, P 130W, Ifsm 35A, ECO-PAC 2, screw  [Log In
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Igbt - Transistor  IGBT, 600V, 23A, 167W, TO220
Igbt - Transistor IGBT, 600V, 23A, 167W, TO220
Final price: 2.90 €
     
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Transistor  IGBT, 650V, 75A, 197W, TO247-4, Series  H5
Transistor IGBT, 650V, 75A, 197W, TO247-4, Series H5
Final price: 7.50 €
     
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Igbt - H-bridge, Urmax 1.2kV, Ic 21A, P 130W, Ifsm 35A, ECO-PAC 2, screw

Prod code: 33053

PSHI25/12 PDF

PSHI25/12

Price:  32.37 €
VAT:  7.77 €
Final price with tax:  40.14 €
Amount:   
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Specifications
Manufacturer POWERSEM
Type of module IGBT
Semiconductor structure transistor/transistor
Topology H-bridge
Off state voltage max. 1.2kV
Collector current 21A
Power 130W
Max. forward impulse current 35A
Case ECO-PAC 2
Application H-bridge
Electrical mounting soldered
Mounting screw
Operating temperature 40...150°C
Gate - emitter voltage 20V
 
Availability: With order
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Manufacturers--- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | LITTELFUSE | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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Parsed: 1.610 s
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