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IGBT
: H-bridge, Urmax 1.2kV, Ic 21A, P 130W, Ifsm 35A, ECO-PAC 2, screw
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Best viewed
Transistor IGBT, 650V, 100A, 268W, TO247-4
Final price:
8.53 €
What's New?
Igbt - Transistor IGBT, 1.2kV, 20A, 170W, TO247, 0.94mJ
Final price:
5.99 €
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Igbt - H-bridge, Urmax 1.2kV, Ic 21A, P 130W, Ifsm 35A, ECO-PAC 2, screw
Prod code:
33053
PDF
PSHI25/12
Click to enlarge
Price:
32.30 €
VAT:
7.75 €
Final price with tax:
40.05 €
Amount:
Long delivery time
Long delivery time
Specifications
Manufacturer
POWERSEM
Type of module
IGBT
Semiconductor structure
transistor/transistor
Topology
H-bridge
Off state voltage max.
1.2kV
Collector current
21A
Power
130W
Max. forward impulse current
35A
Case
ECO-PAC 2
Application
H-bridge
Electrical mounting
soldered
Mounting
screw
Operating temperature
40...150°C
Gate - emitter voltage
±20V
Availability:
With order
Manufacturers
:
---
|
FAIRCHILD SEMICONDUCTOR
|
INFINEON TECHNOLOGIES
|
INTERNATIONAL RECTIFIER
|
IXYS
|
ON SEMICONDUCTOR
|
SEMIKRON
|
ST MICROELECTRONICS
|
TOSHIBA
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Wednesday 16 July, 2025
138483318 requests since Saturday 23 January, 2010
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