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  Catalog » Semiconductors » IGBT : H-bridge, Urmax 1.2kV, Ic 21A, P 130W, Ifsm 35A, ECO-PAC 2, screw  [Log In] 
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Igbt - Transistor IGBT, bipolar, 600V, 40A, 170W, PG-TO220-3, Series H3
Igbt - Transistor IGBT, bipolar, 600V, 40A, 170W, PG-TO220-3, Series H3
Final price: 4.14 €
     
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Igbt - Transistor IGBT, 600V, 75A, 428W, TO247-3, single transistor
Igbt - Transistor IGBT, 600V, 75A, 428W, TO247-3, single transistor
Final price: 11.82 €
     
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Igbt - H-bridge, Urmax 1.2kV, Ic 21A, P 130W, Ifsm 35A, ECO-PAC 2, screw

Prod code: 33053
PSHI25/12 PDF

PSHI25/12
Price:  30.76 €
VAT:  7.38 €
Final price with tax:  38.14 €
Amount:   
Warning Long delivery time
Specifications
Manufacturer POWERSEM
Type of module IGBT
Semiconductor structure transistor/transistor
Topology H-bridge
Off state voltage max. 1.2kV
Collector current 21A
Power 130W
Max. forward impulse current 35A
Case ECO-PAC 2
Application H-bridge
Electrical mounting soldered
Mounting screw
Operating temperature 40...150°C
Gate - emitter voltage ±20V
 
Availability: With order
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Manufacturers: --- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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