|
Specifications |
| Manufacturer |
MICROSEMI |
| Type of module |
IGBT |
| Semiconductor structure |
transistor/transistor |
| Topology |
H-bridge, NTC thermistor |
| Off state voltage max. |
1.2kV |
| Collector current |
75A |
| Power |
500W |
| Max. forward impulse current |
150A |
| Case |
SP4 |
| Electrical mounting |
FASTON connectors, soldered |
| Mounting |
screw |
| Operating temperature |
40...125°C |
| Gate - emitter voltage |
±20V |
| |
|
Αισθητήρια
Hμιαγωγοί
DC-DC Converters
Καθαριστικά - Χημικά
