Specifications |
Manufacturer |
Infineon (IRF) |
Type of transistor |
N-MOSFET |
Technology |
HEXFET® |
Polarisation |
unipolar |
Drain-source voltage |
30V |
Drain current |
160A |
Power |
135W |
Case |
DPAK |
Gate-source voltage |
±20V |
On-state resistance |
3.1mΩ |
Mounting |
SMD |
Gate charge |
39nC |
Features of semiconductor devices |
logic level |
|
|