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Specifications |
| Manufacturer |
ONSEMI |
| Type of transistor |
P-MOSFET x2 |
| Technology |
PowerTrench® |
| Polarisation |
unipolar |
| Drain-source voltage |
-60V |
| Drain current |
-2.9A |
| Power dissipation |
2W |
| Case |
SO8 |
| Gate-source voltage |
±20V |
| On-state resistance |
0.19Ω |
| Mounting |
SMD |
| Gate charge |
23nC |
| Kind of package |
reel, tape |
| Kind of channel |
enhanced |
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