|
Specifications |
| Manufacturer |
INFINEON TECHNOLOGIES |
| Type of transistor |
N-MOSFET |
| Technology |
HEXFET® |
| Polarisation |
unipolar |
| Drain-source voltage |
30V |
| Drain current |
61A |
| Pulsed drain current |
340A |
| Power dissipation |
75W |
| Case |
DPAK |
| Gate-source voltage |
±20V |
| On-state resistance |
5.8mΩ |
| Mounting |
SMD |
| Kind of channel |
enhancement |
| |
|