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: Transistor N-MOSFET x2, unipolar, 30V, 6A, 1.6W, SO8
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Best viewed
--- - Transistor N-MOSFET x2, unipolar, 50V, 3A, 2W, SO8
Final price:
0.99 €
What's New?
Transistor N-MOSFET x2, TrenchFET, unipolar, 40V, 60A, Idm 80A
Final price:
2.48 €
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Transistor N-FET - Transistor N-MOSFET x2, unipolar, 30V, 6A, 1.6W, SO8
Prod code:
41628
PDF
FDS6912A
Click to enlarge
Price:
0.91 €
VAT:
0.22 €
Final price with tax:
1.13 €
Amount:
Long delivery time
Long delivery time
Specifications
Manufacturer
ONSEMI
Type of transistor
N-MOSFET x2
Technology
PowerTrench®
Polarisation
unipolar
Drain-source voltage
30V
Drain current
6A
Power dissipation
1.6W
Case
SO8
Gate-source voltage
±20V
On-state resistance
28mΩ
Mounting
SMD
Gate charge
8.1nC
Kind of package
reel, tape
Kind of channel
enhanced
Features of semiconductor devices
logic level
Availability:
With order
Manufacturers
:
---
|
ADVANCED POWER ELECTRONICS
|
DIODES INCORPORATED
|
DIOTEC SEMICONDUCTOR
|
FAIRCHILD SEMICONDUCTOR
|
INFINEON TECHNOLOGIES
|
INTERNATIONAL RECTIFIER
|
IXYS
|
MICROCHIP TECHNOLOGY
|
NXP
|
ON SEMICONDUCTOR
|
RENESAS
|
ST MICROELECTRONICS
|
TAIWAN SEMICONDUCTOR
|
TEXAS INSTRUMENTS
|
TOSHIBA
|
VISHAY
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