|
Specifications |
| Manufacturer |
ONSEMI |
| Type of transistor |
N-MOSFET x2 |
| Technology |
PowerTrench® |
| Polarisation |
unipolar |
| Drain-source voltage |
30V |
| Drain current |
6A |
| Power dissipation |
1.6W |
| Case |
SO8 |
| Gate-source voltage |
±20V |
| On-state resistance |
28mΩ |
| Mounting |
SMD |
| Gate charge |
8.1nC |
| Kind of package |
reel, tape |
| Kind of channel |
enhanced |
| Features of semiconductor devices |
logic level |
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