|
Specifications |
| Manufacturer |
TAIWAN SEMICONDUCTOR |
| Type of transistor |
P-MOSFET |
| Polarisation |
unipolar |
| Drain-source voltage |
-30V |
| Drain current |
-3A |
| Case |
SOT23 |
| Gate-source voltage |
±20V |
| On-state resistance |
60mΩ |
| Mounting |
SMD |
| Gate charge |
2.7nC |
| Kind of channel |
enhanced |
| Gross weight |
0.01 g |
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