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  Catalog » Semiconductors » Transistor / Fet » FET : Transistor N-MOSFET, Trench™, unipolar, 100V, 160A, 430W, TO220AB  [Log In] 
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Transistor N-MOSFET - Transistor N-MOSFET, unipolar, 800V, 3.8A, 110W, TO220-3
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Transistor N-FET - Transistor N-MOSFET, Trench™, unipolar, 100V, 160A, 430W, TO220AB

Prod code: 37497
IXTP160N10T PDF

IXTP160N10T
Price:  4.22 €
VAT:  1.01 €
Final price with tax:  5.23 €
Amount:   
Usually shipped within 2-3 business days.
Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology Trench™
Polarisation unipolar
Drain-source voltage 100V
Drain current 160A
Power dissipation 430W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 7mΩ
Mounting THT
Gate charge 132nC
Kind of package tube
Kind of channel enhanced
Reverse recovery time 60ns
Gross weight 2.033 g
 
Availability: With order
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Manufacturers: --- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TOSHIBA | VISHAY
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