... ... ...
...
ACDCshop logo
Set of tools for repairing soldered connections
ΕλληνικάSeperatorEnglishSeperator
New products Navigation Company My Account My cart Contact
Search:    
  Catalog » Semiconductors » Transistor / Fet » FET : Transistor N-MOSFET 60V 160A 230W TO220AB  [Log In
Background
...
  arrow Categories  
     
  arrow Best viewed  
Transistor N-MOSFET - Transistor  N-MOSFET, unipolar, 300V, 36A, 300W, TO3P
Transistor N-MOSFET - Transistor N-MOSFET, unipolar, 300V, 36A, 300W, TO3P
Final price: 5.78 €
     
  arrow What's New? more  
Transistor N-FET - Transistor  N-MOSFET, unipolar, 85V, 148A, Idm  850A, 300W, TO220AB
Transistor N-FET - Transistor N-MOSFET, unipolar, 85V, 148A, Idm 850A, 300W, TO220AB
Final price: 3.81 €
     
  arrow Payment  
Visa Mastercard 
Verified visa Secure Code 
Paypal 
     
  arrow Information  
  Our company
  Payment options
  Shipping & Returns
  Buying options
  Freq Asked Questions
  Privacy Notice
  Conditions of Use
  Contact Us
     
Seperator
Seperator

FET - Transistor N-MOSFET 60V 160A 230W TO220AB

Prod code: 3328

IRFB3306PBF PDF

IRFB3306PBF

Price:  2.41 €
VAT:  0.58 €
Final price with tax:  2.99 €
Amount:   
Usually shipped within 1 business day.
Specifications
Manufacturer INTERNATIONAL RECTIFIER
Transistor type N-MOSFET
Polarisation unipolar
Transistor kind HEXFET
Drain-source voltage 60V
Drain current 160A
Power 230W
Case TO220AB
Gate-source voltage 20V
On-state resistance 4.2mΩ
Junction-to-case thermal resistance 650mK/W
Mounting THT
Gate charge 85nC
 
Availability: On stock
Seperator Back Reviews Seperator
Manufacturers--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
left left Other products right
IRFD9014PBF - Transistor P-MOSFET, unipolar, -60V, -1.1A, DIP4
IRFD9014PBF - Transistor P-MOSFET, unipolar, -60V, -1.1A, DIP4

STP80NF10 - Transistor N-MOSFET, unipolar, 100V, 80A, 300W, TO220
STP80NF10 - Transistor N-MOSFET, unipolar, 100V, 80A, 300W, TO220

IRLB8721PBF - Transistor  N-MOSFET, unipolar, HEXFET, logic level, 30V, 62A, 65W
IRLB8721PBF - Transistor N-MOSFET, unipolar, HEXFET, logic level, 30V, 62A, 65W

IRLML2246TRPBF - Transistor  P-MOSFET, unipolar, HEXFET, logic level, -20V, -2.6A
IRLML2246TRPBF - Transistor P-MOSFET, unipolar, HEXFET, logic level, -20V, -2.6A

IRLMS6702TRPBF - Transistor  P-MOSFET, unipolar, HEXFET, logic level, -20V, -2.3A
IRLMS6702TRPBF - Transistor P-MOSFET, unipolar, HEXFET, logic level, -20V, -2.3A

SI2315BDS-T1-E3 - Transistor  P-MOSFET, unipolar, -12V, -3A, 750mW, SOT23
SI2315BDS-T1-E3 - Transistor P-MOSFET, unipolar, -12V, -3A, 750mW, SOT23

BC857A-DIO - Transistor  PNP, bipolar, 50V, 100mA, 250mW, SOT23
BC857A-DIO - Transistor PNP, bipolar, 50V, 100mA, 250mW, SOT23

BC857BW-DIO - Transistor  PNP, bipolar, 50V, 100mA, 200mW, SOT323
BC857BW-DIO - Transistor PNP, bipolar, 50V, 100mA, 200mW, SOT323

BC847A-DIO - Transistor  NPN, bipolar, 50V, 100mA, 250mW, SOT23
BC847A-DIO - Transistor NPN, bipolar, 50V, 100mA, 250mW, SOT23

BC848BLT1G - Transistor  NPN, bipolar, 30V, 100mA, 30mW, SOT23
BC848BLT1G - Transistor NPN, bipolar, 30V, 100mA, 30mW, SOT23

2N6052G - Transistor  PNP, bipolar, Darlington, 100V, 12A, 150W, TO3
2N6052G - Transistor PNP, bipolar, Darlington, 100V, 12A, 150W, TO3

FQA36P15 - Transistor  P-MOSFET, unipolar, 150V, 25.5A, 294W, TO3PN, QFET®
FQA36P15 - Transistor P-MOSFET, unipolar, 150V, 25.5A, 294W, TO3PN, QFET®

STD60NF06T4 - Transistor  N-MOSFET, unipolar, 60V, 42A, 110W, DPAK
STD60NF06T4 - Transistor N-MOSFET, unipolar, 60V, 42A, 110W, DPAK

IPP65R380C6XKSA1 - Transistor  N-MOSFET, unipolar, 650V, 10.6A, 83W, PG-TO220-3
IPP65R380C6XKSA1 - Transistor N-MOSFET, unipolar, 650V, 10.6A, 83W, PG-TO220-3

BC109C-CDI - Transistor  NPN, bipolar, 25V, 0.2A, 0.2/0.75W, TO18, 4dB
BC109C-CDI - Transistor NPN, bipolar, 25V, 0.2A, 0.2/0.75W, TO18, 4dB

Seperator
Parsed: 0.013 s
Background
Rounded corner: bottom-left Background Rounded corner: bottom-right