|
Specifications |
| Manufacturer |
TEXAS INSTRUMENTS |
| Type of transistor |
N-MOSFET |
| Technology |
NexFET™ |
| Polarisation |
unipolar |
| Drain-source voltage |
40V |
| Drain current |
100A |
| Power dissipation |
115W |
| Case |
TO220-3 |
| Gate-source voltage |
±20V |
| On-state resistance |
5.5mΩ |
| Mounting |
THT |
| Gate charge |
19nC |
| Kind of package |
tube |
| Heatsink thickness |
1.14...1.4mm |
| Gross weight |
1.987 g |
| |
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Semiconductors
DC-DC Converters
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