| | Specifications |  
 | Manufacturer | TOSHIBA |  | Type of transistor | IGBT |  | Collector-emitter voltage | 600V |  | Collector current | 30A |  | Power dissipation | 170W |  | Case | TO3PN |  | Gate-emitter voltage | ±20V |  | Pulsed collector current | 60A |  | Mounting | THT |  | Kind of package | tube |  | Turn-on time | 240ns |  | Turn-off time | 430ns |  |  | 
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