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: Transistor P-MOSFET, unipolar, -30V, -1.3A, 0.5W, SuperSOT-3
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Best viewed
FET - Transistor N-MOSFET 30V 260A 290W TO220AB
Final price:
4.63 €
What's New?
Transistor N-MOSFET - Transistor N-MOSFET, unipolar, 600V, 11A, Idm 44A, 160W, TO220-3
Final price:
3.91 €
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Transistor P-FET - Transistor P-MOSFET, unipolar, -30V, -1.3A, 0.5W, SuperSOT-3
Prod code:
36209
PDF
FDN352AP
Click to enlarge
Price:
0.33 €
VAT:
0.08 €
Final price with tax:
0.41 €
Amount:
Usually shipped within 1 business day.
Usually shipped within 1 business day.
Specifications
Manufacturer
ONSEMI
Type of transistor
P-MOSFET
Technology
PowerTrench®
Polarisation
unipolar
Drain-source voltage
-30V
Drain current
-1.3A
Power dissipation
0.5W
Case
SuperSOT-3
Gate-source voltage
±25V
On-state resistance
400mΩ
Mounting
SMD
Gate charge
1.9nC
Kind of package
reel,
tape
Kind of channel
enhanced
Features of semiconductor devices
logic level
Gross weight
0.023 g
Availability:
On stock
Manufacturers
:
---
|
ADVANCED POWER ELECTRONICS
|
DIODES INCORPORATED
|
DIOTEC SEMICONDUCTOR
|
FAIRCHILD SEMICONDUCTOR
|
INFINEON TECHNOLOGIES
|
INTERNATIONAL RECTIFIER
|
IXYS
|
MICROCHIP TECHNOLOGY
|
NXP
|
ON SEMICONDUCTOR
|
RENESAS
|
ST MICROELECTRONICS
|
TAIWAN SEMICONDUCTOR
|
TEXAS INSTRUMENTS
|
TOSHIBA
|
VISHAY
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