New products
Navigation
Company
My Account
My cart
Contact
Search:
Catalog
»
Semiconductors
»
Transistor / Fet
»
FET
: Transistor P-MOSFET, unipolar, -30V, -1.3A, 0.5W, SuperSOT-3
[
Log In
]
Categories
Relays
Sensors
Switches
Transformers
Passive components
Repair shop equipment
Semiconductors
Bridge Rectifiers
DC-DC Converters
Diodes
IGBT
Integrated Circuits
Optocouplers
Thyristor - Triac
Transistor / Fet
Transistor NPN
Transistor PNP
FET
GSM-GPS-RF Modules
Connectors/Adapters
Power Supplies
Measuring instruments
Tools
Warehouse Equipment
Arduino / Raspberry Pi
Chemical sprays
Mechanical
Batteries
Sound Sources
Enclosures
Cables - Cable assemblies
3D Printer Accessories
PCB laminates - Breadboard - Electronic Kit
Optoelectronics
Coolling
Control - PLC
Best viewed
Transistor N-MOSFET - Transistor N-MOSFET, unipolar, 800V, 3.8A, 110W, TO220-3
Final price:
2.90 €
What's New?
FET - Transistor N-MOSFET x2, unipolar, 30V, 6.5A, 1.3W, SO8
Final price:
0.98 €
Payment
Information
Our company
Payment options
Shipping & Returns
Buying options
Freq Asked Questions
Privacy Notice
Conditions of Use
Contact Us
Transistor P-FET - Transistor P-MOSFET, unipolar, -30V, -1.3A, 0.5W, SuperSOT-3
Prod code:
36209
PDF
FDN352AP
Click to enlarge
Price:
0.32 €
VAT:
0.08 €
Final price with tax:
0.40 €
Amount:
Usually shipped within 1 business day.
Usually shipped within 1 business day.
Specifications
Manufacturer
ONSEMI
Type of transistor
P-MOSFET
Technology
PowerTrench®
Polarisation
unipolar
Drain-source voltage
-30V
Drain current
-1.3A
Power dissipation
0.5W
Case
SuperSOT-3
Gate-source voltage
±25V
On-state resistance
400mΩ
Mounting
SMD
Gate charge
1.9nC
Kind of package
reel,  
tape
Kind of channel
enhanced
Features of semiconductor devices
logic level
Gross weight
0.023 g
Availability:
On stock
Manufacturers
:
---
|
ADVANCED POWER ELECTRONICS
|
DIODES INCORPORATED
|
DIOTEC SEMICONDUCTOR
|
FAIRCHILD SEMICONDUCTOR
|
INFINEON TECHNOLOGIES
|
INTERNATIONAL RECTIFIER
|
IXYS
|
MICROCHIP TECHNOLOGY
|
NXP
|
ON SEMICONDUCTOR
|
RENESAS
|
ST MICROELECTRONICS
|
TAIWAN SEMICONDUCTOR
|
TOSHIBA
|
VISHAY
Other products
IRFU2905ZPBF - Transistor N-MOSFET 55V 59A 110W IPAK
BUT30V-ST - Transistor NPN, bipolar, 200V, 100A, 250W, ISOTOP
IRFBE30PBF - Transistor N-MOSFET, unipolar, 800V, 4A, 125W, TO220AB
IRFI740GPBF - Transistor N-MOSFET, unipolar, 400V, 5.4A, 40W, TO220F
IRL2703PBF - Transistor N-MOSFET, unipolar, HEXFET, logic level, 30V, 24A, 45W
BC857B.215 - Transistor PNP, bipolar, 45V, 100mA, 200mW, SOT23,TO236AB
BSP52.115 - Transistor NPN, bipolar, Darlington, 80V, 1A, 1.25W, SOT223
MJD44H11T4G - Transistor NPN, bipolar, 80V, 8A, 20W, DPAK
STW28NM60ND - Transistor N-MOSFET, unipolar, 600V, 14.5A, 190W, TO247
MUN2211T1G - Transistor NPN, bipolar, BRT, 50V, 100mA, 230mW, SC59
STP17NK40ZFP - Transistor N-MOSFET, unipolar, 400V, 9.4A, 35W, TO220FP
HUF75645P3 - Transistor N-MOSFET, unipolar, 100V, 65A, 310W, TO220, UltraFET®
AO3403 - Transistor P-MOSFET, unipolar, -30V, -2.2A, 900mW, SOT23-3
BC639-10-CDI - Transistor NPN, bipolar, 80V, 1A, 0.8/2.75W, TO92
IXTA3N150HV - Transistor N-MOSFET, unipolar, 1.5kV, 3A, 250W, TO263, 900ns
Customers who bought this product also purchased
Microphone - Condenser microphone, Ø9.7x6.7mm, 2.2kŮ, 500uA, 1.5÷10V, SNR 60dB
Ferrite - Ferrite toroidal, L 4mm, Int.dia 6mm, Out.diam 10mm, ±0,20mm
Microphone - Microphone, Body dim Ø9.7x6.7mm, 2.2kŮ, 500uA, 1.5÷10V, SNR 60dB
Microphone - Microphone, Body dim Ø9.7x5.2mm, 2.2kŮ, 0.8mA, 1.5÷10V, SNR 60dB
LED - LED, 10mm, red, 160-270mcd, 60°, Front convex
Resistor - Resistor metal film THT 680Ω 0.4W ±1% Ø1.9x3.7mm 50ppm/°
Spacer - Screwed spacer sleeve, Int.thread M3, 10mm, Ext.thread M3, brass
LED - LED, 10mm, green, 40-45mcd, 40°, Front convex
Tuesday 30 April, 2024
116778551 requests since Saturday 23 January, 2010
www.acdcshop.gr, Misonos 47, Sitia Crete:
+3028430 20201
, e-mail:
info@acdcshop.gr
Copyright © 2004-2024 acdcshop.gr - Design by
ABCDtec
Parsed: 2.791 s