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Specifications |
| Manufacturer |
ONSEMI |
| Type of transistor |
P-MOSFET |
| Technology |
PowerTrench® |
| Polarisation |
unipolar |
| Drain-source voltage |
-30V |
| Drain current |
-1.3A |
| Power dissipation |
0.5W |
| Case |
SuperSOT-3 |
| Gate-source voltage |
±25V |
| On-state resistance |
400mΩ |
| Mounting |
SMD |
| Gate charge |
1.9nC |
| Kind of package |
reel,   tape |
| Kind of channel |
enhanced |
| Features of semiconductor devices |
logic level |
| Gross weight |
0.023 g |
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