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: Transistor P-MOSFET, -60V, -4A, 360mW, TO39, Channel enhanced
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Power resistor - Resistor power metal, THT, 18kÙ, 2W, ±5%, 500V, Ø3.9x12mm, axial
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Transistor P-FET - Transistor P-MOSFET, -60V, -4A, 360mW, TO39, Channel enhanced
Prod code:
17920
PDF
VP2206N2
Specifications
Manufacturer
MICROCHIP TECHNOLOGY
Transistor type
P-MOSFET
Drain-source voltage
60V
Drain current
4A
Power
360mW
Case
TO39
Gate-source voltage
3.5V
On-state resistance
900mÙ
Mounting
THT
Channel kind
enhanced
Click to enlarge
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