|
Specifications |
| Manufacturer |
IXYS |
| Type of transistor |
N-MOSFET |
| Technology |
HiPerFET™, X3-Class |
| Polarisation |
unipolar |
| Drain-source voltage |
200V |
| Drain current |
140A |
| Power dissipation |
520W |
| Case |
TO3P |
| Gate-source voltage |
±20V |
| On-state resistance |
9.6mΩ |
| Mounting |
THT |
| Gate charge |
127nC |
| Kind of package |
tube |
| Kind of channel |
enhanced |
| Reverse recovery time |
90ns |
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