|
Specifications |
| Manufacturer |
TEXAS INSTRUMENTS |
| Type of transistor |
N-MOSFET |
| Technology |
NexFET™ |
| Polarisation |
unipolar |
| Drain-source voltage |
80V |
| Drain current |
150A |
| Power dissipation |
375W |
| Case |
TO220-3 |
| Gate-source voltage |
±20V |
| On-state resistance |
2mΩ |
| Mounting |
THT |
| Gate charge |
0.12µC |
| Kind of package |
tube |
| Kind of channel |
enhanced |
| Heatsink thickness |
1.14...1.4mm |
| |
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