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Specifications |
| Manufacturer |
INFINEON TECHNOLOGIES |
| Type of transistor |
N-MOSFET |
| Technology |
OptiMOS™ 3 |
| Polarisation |
unipolar |
| Drain-source voltage |
60V |
| Drain current |
90A |
| Power dissipation |
188W |
| Case |
PG-TO262-3 |
| Gate-source voltage |
±20V |
| On-state resistance |
4mΩ |
| Mounting |
THT |
| Kind of channel |
enhanced |
| Gross weight |
1.54 g |
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