Specifications |
Manufacturer | ONSEMI |
Type of transistor | N-MOSFET |
Polarisation | unipolar |
Drain-source voltage | 500V |
Drain current | 14A |
Pulsed drain current | 96A |
Power dissipation | 270W |
Case | TO3PN |
Gate-source voltage | ±30V |
On-state resistance | 0.2Ù |
Mounting | THT |
Gate charge | 85nC |
Kind of package | tube |
Kind of channel | enhancement |
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