| Specifications |
| Manufacturer | ONSEMI |
| Type of transistor | N-MOSFET |
| Polarisation | unipolar |
| Drain-source voltage | 500V |
| Drain current | 14A |
| Pulsed drain current | 96A |
| Power dissipation | 270W |
| Case | TO3PN |
| Gate-source voltage | ±30V |
| On-state resistance | 0.2Ù |
| Mounting | THT |
| Gate charge | 85nC |
| Kind of package | tube |
| Kind of channel | enhancement |
|