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Specifications |
| Manufacturer |
ONSEMI |
| Type of transistor |
N-MOSFET |
| Polarisation |
unipolar |
| Drain-source voltage |
300V |
| Drain current |
35A |
| Pulsed drain current |
236A |
| Power dissipation |
500W |
| Case |
TO3PN |
| Gate-source voltage |
±30V |
| On-state resistance |
56mΩ |
| Mounting |
THT |
| Gate charge |
0.1µC |
| Kind of package |
tube |
| Kind of channel |
enhanced |
| |
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