|
Specifications |
| Manufacturer |
ONSEMI |
| Type of transistor |
N-MOSFET |
| Technology |
QFET® |
| Polarisation |
unipolar |
| Drain-source voltage |
200V |
| Drain current |
17.8A |
| Power dissipation |
156W |
| Case |
TO220AB |
| Gate-source voltage |
±30V |
| On-state resistance |
82mΩ |
| Mounting |
THT |
| Gate charge |
110nC |
| Kind of package |
tube |
| Kind of channel |
enhanced |
| Gross weight |
2.04 g |
| |
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Semiconductors
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