| Specifications |
| Manufacturer | INFINEON TECHNOLOGIES |
| Type of transistor | N-MOSFET |
| Technology | SIPMOS™ |
| Polarisation | unipolar |
| Drain-source voltage | 200V |
| Drain current | 0.66A |
| Power dissipation | 1.8W |
| Case | SOT223 |
| Gate-source voltage | ±20V |
| On-state resistance | 1.8Ù |
| Mounting | SMD |
| Kind of channel | enhancement |
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