Specifications |
Manufacturer |
INFINEON TECHNOLOGIES |
Type of transistor |
N-MOSFET |
Technology |
SIPMOS™ |
Polarisation |
unipolar |
Drain-source voltage |
200V |
Drain current |
0.53A |
Pulsed drain current |
2.6A |
Power dissipation |
1.8W |
Case |
SOT223 |
Gate-source voltage |
±20V |
On-state resistance |
3.5Ω |
Mounting |
SMD |
Kind of channel |
depleted |
Gross weight |
0.147 g |
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