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: Transistor N-MOSFET, unipolar, 200V, 0.53A, Idm 2.6A, 1.8W, SOT223
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Transistor N-MOSFET - Transistor N-JFET, unipolar, 2mA, 0.625W, TO92, Igt 50mA
Final price:
0.27 €
What's New?
Transistor P-FET - Transistor P-MOSFET, unipolar, -30V, -55A, 45W, TO252
Final price:
0.73 €
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Transistor N-FET - Transistor N-MOSFET, unipolar, 200V, 0.53A, Idm 2.6A, 1.8W, SOT223
Prod code:
39792
PDF
BSP149H6327XTSA1
Click to enlarge
Price:
1.82 €
VAT:
0.44 €
Final price with tax:
2.26 €
Amount:
Usually shipped within 2-3 business days.
Usually shipped within 2-3 business days.
Specifications
Manufacturer
INFINEON TECHNOLOGIES
Type of transistor
N-MOSFET
Technology
SIPMOS™
Polarisation
unipolar
Drain-source voltage
200V
Drain current
0.53A
Pulsed drain current
2.6A
Power dissipation
1.8W
Case
SOT223
Gate-source voltage
±20V
On-state resistance
3.5Ω
Mounting
SMD
Kind of channel
depleted
Gross weight
0.147 g
Availability:
With order
Manufacturers
:
---
|
ADVANCED POWER ELECTRONICS
|
DIODES INCORPORATED
|
DIOTEC SEMICONDUCTOR
|
FAIRCHILD SEMICONDUCTOR
|
INFINEON TECHNOLOGIES
|
INTERNATIONAL RECTIFIER
|
IXYS
|
MICROCHIP TECHNOLOGY
|
NXP
|
ON SEMICONDUCTOR
|
RENESAS
|
ST MICROELECTRONICS
|
TAIWAN SEMICONDUCTOR
|
TEXAS INSTRUMENTS
|
TOSHIBA
|
VISHAY
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