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  Catalog » Semiconductors » Transistor / Fet » FET : Transistor N-MOSFET, unipolar, 200V, 0.53A, Idm 2.6A, 1.8W, SOT223  [Log In
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Transistor N-FET - Transistor  N-MOSFET, unipolar, 500V, 8A, Idm  52A, 48W, TO220FP
Transistor N-FET - Transistor N-MOSFET, unipolar, 500V, 8A, Idm 52A, 48W, TO220FP
Final price: 4.32 €
     
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Transistor N-MOSFET - Transistor  N-JFET, unipolar, 2mA, 0.625W, TO92, Igt  50mA
Transistor N-MOSFET - Transistor N-JFET, unipolar, 2mA, 0.625W, TO92, Igt 50mA
Final price: 0.27 €
     
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Transistor N-FET - Transistor N-MOSFET, unipolar, 200V, 0.53A, Idm 2.6A, 1.8W, SOT223

Prod code: 39792

BSP149H6327XTSA1 PDF

BSP149H6327XTSA1

Price:  1.82 €
VAT:  0.44 €
Final price with tax:  2.26 €
Amount:   
Usually shipped within 2-3 business days.
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology SIPMOS™
Polarisation unipolar
Drain-source voltage 200V
Drain current 0.53A
Pulsed drain current 2.6A
Power dissipation 1.8W
Case SOT223
Gate-source voltage ±20V
On-state resistance 3.5Ω
Mounting SMD
Kind of channel depleted
Gross weight 0.147 g
 
Availability: With order
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Manufacturers--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
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