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: Transistor N-MOSFET, Trench™, unipolar, 100V, 160A, 430W, TO220AB
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Best viewed
FET - Transistor 2xP-MOSFET -30V -4,9A 2W SO8
Final price:
0.87 €
What's New?
Transistor N-MOSFET, unipolar, 60V, 184A, Idm 736A, 208.3W
Final price:
1.71 €
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Transistor N-FET - Transistor N-MOSFET, Trench™, unipolar, 100V, 160A, 430W, TO220AB
Prod code:
37497
PDF
IXTP160N10T
Click to enlarge
Price:
3.84 €
VAT:
0.92 €
Final price with tax:
4.76 €
Amount:
Usually shipped within 1 business day.
Usually shipped within 1 business day.
Specifications
Manufacturer
IXYS
Type of transistor
N-MOSFET
Technology
Trench™
Polarisation
unipolar
Drain-source voltage
100V
Drain current
160A
Power dissipation
430W
Case
TO220AB
Gate-source voltage
±20V
On-state resistance
7mΩ
Mounting
THT
Gate charge
132nC
Kind of package
tube
Kind of channel
enhanced
Reverse recovery time
60ns
Gross weight
2.033 g
Availability:
On stock
Manufacturers
:
---
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ADVANCED POWER ELECTRONICS
|
DIODES INCORPORATED
|
DIOTEC SEMICONDUCTOR
|
FAIRCHILD SEMICONDUCTOR
|
INFINEON TECHNOLOGIES
|
INTERNATIONAL RECTIFIER
|
IXYS
|
MICROCHIP TECHNOLOGY
|
NXP
|
ON SEMICONDUCTOR
|
RENESAS
|
ST MICROELECTRONICS
|
TAIWAN SEMICONDUCTOR
|
TEXAS INSTRUMENTS
|
TOSHIBA
|
VISHAY
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