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Specifications |
| Manufacturer |
IXYS |
| Type of transistor |
N-MOSFET |
| Technology |
Trench™ |
| Polarisation |
unipolar |
| Drain-source voltage |
100V |
| Drain current |
160A |
| Power dissipation |
430W |
| Case |
TO220AB |
| Gate-source voltage |
±20V |
| On-state resistance |
7mΩ |
| Mounting |
THT |
| Gate charge |
132nC |
| Kind of package |
tube |
| Kind of channel |
enhanced |
| Reverse recovery time |
60ns |
| Gross weight |
2.033 g |
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