Specifications |
Manufacturer |
SHINDENGEN |
Type of transistor |
N-MOSFET |
Technology |
EETMOS2 |
Polarisation |
unipolar |
Drain-source voltage |
60V |
Drain current |
60A |
Pulsed drain current |
240A |
Power dissipation |
62.5W |
Case |
FB (TO252AA) |
Gate-source voltage |
±20V |
On-state resistance |
7.7mÙ |
Mounting |
SMD |
Gate charge |
55nC |
Kind of package |
reel, tape |
Kind of channel |
enhanced |
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