... ... ...
...
ACDCshop logo
Set of tools for repairing soldered connections
GreekSeperatorEnglishSeperator
New products Navigation Company My Account My cart Contact
Search:    
  Catalog » Semiconductors » Transistor / Fet » FET : Transistor N-MOSFET, EETMOS2, unipolar, 60V, 60A, Idm 240A, 62.5W  [Log In
Background
...
  arrow Categories  
     
  arrow Best viewed  
Transistor N-MOSFET - Transistor  N-MOSFET, unipolar, 300V, 36A, 300W, TO3P
Transistor N-MOSFET - Transistor N-MOSFET, unipolar, 300V, 36A, 300W, TO3P
Final price: 5.78 €
     
  arrow What's New? more  
Transistor N-MOSFET - Transistor  N-JFET, unipolar, 2mA, 0.625W, TO92, Igt  50mA
Transistor N-MOSFET - Transistor N-JFET, unipolar, 2mA, 0.625W, TO92, Igt 50mA
Final price: 0.27 €
     
  arrow Payment  
Visa Mastercard 
Verified visa Secure Code 
Paypal 
     
  arrow Information  
  Our company
  Payment options
  Shipping & Returns
  Buying options
  Freq Asked Questions
  Privacy Notice
  Conditions of Use
  Contact Us
     
Seperator
Seperator

Transistor N-MOSFET - Transistor N-MOSFET, EETMOS2, unipolar, 60V, 60A, Idm 240A, 62.5W

Prod code: 40767

_Shindengen_Catalogue_2020.pdf PDF 

P60B6EL-5071

Price:  1.10 €
VAT:  0.26 €
Final price with tax:  1.36 €
Amount:   
Usually shipped within 2-3 business days.
Specifications
Manufacturer SHINDENGEN
Type of transistor N-MOSFET
Technology EETMOS2
Polarisation unipolar
Drain-source voltage 60V
Drain current 60A
Pulsed drain current 240A
Power dissipation 62.5W
Case FB (TO252AA)
Gate-source voltage ±20V
On-state resistance 7.7mÙ
Mounting SMD
Gate charge 55nC
Kind of package reel, tape
Kind of channel enhanced
 
Availability: With order
Seperator Back Reviews Seperator
Manufacturers--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
left left Other products right
BCV27 - Transistor NPN Darlington 30V 0,5A 0,25W SOT23
BCV27 - Transistor NPN Darlington 30V 0,5A 0,25W SOT23

TIP132 - Transistor NPN Darlington 100V 8A 70W TO220
TIP132 - Transistor NPN Darlington 100V 8A 70W TO220

STP7NK80Z - Transistor N-MOSZ 800V 5,2A 125W 1,8R TO220
STP7NK80Z - Transistor N-MOSZ 800V 5,2A 125W 1,8R TO220

TP2640N3-G - Transistor P-MOSFET, -400V, -700mA, 1W, TO92, Channel enhanced
TP2640N3-G - Transistor P-MOSFET, -400V, -700mA, 1W, TO92, Channel enhanced

BC547B-SEM - Transistor  NPN, bipolar, 45V, 100mA, 500mW, TO92
BC547B-SEM - Transistor NPN, bipolar, 45V, 100mA, 500mW, TO92

IRF7424TRPBF - Transistor  P-MOSFET, unipolar, -30V, -11A, 2.5W, SO8
IRF7424TRPBF - Transistor P-MOSFET, unipolar, -30V, -11A, 2.5W, SO8

BC807-25LT1G - Transistor  PNP, bipolar, 45V, 500mA, 225mW, SOT23
BC807-25LT1G - Transistor PNP, bipolar, 45V, 500mA, 225mW, SOT23

BC860C-DIO - Transistor  PNP, bipolar, 50V, 100mA, 250mW, SOT23
BC860C-DIO - Transistor PNP, bipolar, 50V, 100mA, 250mW, SOT23

MMBTA63 - Transistor  PNP, bipolar, Darlington, 30V, 1.2A, 350mW, SOT23-3
MMBTA63 - Transistor PNP, bipolar, Darlington, 30V, 1.2A, 350mW, SOT23-3

IRLML2030TRPBF - Transistor  N-MOSFET, unipolar, logic level, 30V, 2.7A, 1.3W, SOT23
IRLML2030TRPBF - Transistor N-MOSFET, unipolar, logic level, 30V, 2.7A, 1.3W, SOT23

2N7008-G - Transistor  N-MOSFET, 60V, 500mA, TO92
2N7008-G - Transistor N-MOSFET, 60V, 500mA, TO92

STP6N95K5 - Transistor  N-MOSFET, unipolar, 950V, 6A, 90W, TO220-3
STP6N95K5 - Transistor N-MOSFET, unipolar, 950V, 6A, 90W, TO220-3

WMO11N65C2-CYG - Transistor  N-MOSFET, WMOS™ C2, unipolar, 650V, 9A, 63W, TO252
WMO11N65C2-CYG - Transistor N-MOSFET, WMOS™ C2, unipolar, 650V, 9A, 63W, TO252

IXFN520N075T2 - Module, single transistor, 75V, 480A, SOT227B, Ugs  ±30V, screw
IXFN520N075T2 - Module, single transistor, 75V, 480A, SOT227B, Ugs ±30V, screw

NTE469 - Transistor  N-JFET, unipolar, 35V, 2mA, 0.625W, TO92, Igt  50mA
NTE469 - Transistor N-JFET, unipolar, 35V, 2mA, 0.625W, TO92, Igt 50mA

Seperator
Parsed: 0.047 s
Background
Rounded corner: bottom-left Background Rounded corner: bottom-right