|
Specifications |
| Manufacturer |
INTERNATIONAL RECTIFIER |
| Transistor type |
N-MOSFET |
| Polarisation |
unipolar |
| Transistor kind |
HEXFET |
| Drain-source voltage |
200V |
| Drain current |
18A |
| Power |
150W |
| Case |
TO262 |
| Gate-source voltage |
20V |
| On-state resistance |
150mŮ |
| Junction-to-case thermal resistance |
1K/W |
| Mounting |
THT |
| Gate charge |
44.7nC |
| |
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