Specifications |
Manufacturer |
INTERNATIONAL RECTIFIER |
Transistor type |
N-MOSFET |
Polarisation |
unipolar |
Transistor kind |
HEXFET |
Drain-source voltage |
200V |
Drain current |
14A |
Power |
110W |
Case |
DPAK |
Gate-source voltage |
30V |
On-state resistance |
235mŮ |
Junction-to-case thermal resistance |
1.4K/W |
Mounting |
SMD |
Gate charge |
25nC |
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