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Specifications |
| Manufacturer |
STMicroelectronics |
| Type of transistor |
IGBT |
| Collector-emitter voltage |
650V |
| Collector current |
80A |
| Power dissipation |
470W |
| Case |
TO247-3 |
| Gate-emitter voltage |
±20V |
| Pulsed collector current |
300A |
| Mounting |
THT |
| Gate charge |
414nC |
| Kind of package |
tube |
| Features of semiconductor devices |
integrated anti-parallel diode |
| Gross weight |
4.55 g |
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